Phase transition in multicomponent semiconductor Cd_1−xMn_xGeP₂ under hydrostatic pressure up to 7 GPA

Abstract

Electrical resistivity and Hall coefficient in the samples of Cd_1−xMn_xGeP₂, where x=0÷ 0.19, have been measured under hydrostatic pressures up to 5 GPa. All measurements were carried out at T=300 K. A dissociation of Cd_1−xMn_xGeP₂ solid solution was observed and the formation of separated phases of CdP₂ and Ge were found at P=3.2 GPa for the Mn fraction x<0.19. The further increase of Mn fraction stabilized a crystal structure and for the compound of Cd_0.81Mn_0.19GeP₂ a reversible phase transition was observed at P=3.5 GPa.

Keywords:

• Magnetic semiconductor
• High hydrostatic pressure
• Hall coefficient
• Phase transition

Acknowledgements

The work has been carried out under the financial support of Russian foundation for basic research (Projects: No. 05-03-33068, No. 05-02-16608) and the project of RAS Presidium ‘Physics and mechanics of highly condensed matter and of the problem of inner structure of the Earth and planets’.