Pressure dependence electrical resistivity in DVT grown molybdenum dichalcogenides

Abstract

Single crystals of MoS _x Se_2−x (x=0, 1, 2) have been grown by direct vapour transport method. Pressure-dependent d.c. electrical resistivity measurements have been carried out on the grown crystals to check the possibility of phase transition up to 8 GPa. However, no such transition is observed in the present case but a decrease in resistivity is found with increase in pressure. The observed results have been analysed and discussed on the basis of band structure.

Keywords:

• MoS₂
• MoSSe
• MoSe₂
• single crystals
• d.c. electrical resistivity
• high pressure

Acknowledgements

Two of the authors (S.H. Chaki and G.K. Solanki) are thankful to the Gujarat Council on Science and Technology (GUJCOST), Gandhinagar for providing financial assistance through Minor Research Project; vide No. GUJCOST/MRP/201081/07-08/1651 for carrying out this research work.