Uniaxial compression influence on electroluminescence spectra in p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs heterostructures

Abstract

We present new results on the influence of uniaxial stress up to P=400 MPa along [110] direction on the electroluminescence (EL) spectra of p-Al _x Ga_1−x As/GaAs_1−y P _y /n-Al _x Ga_1−x As double heterostructures. With increasing stress, the emission spectra demonstrate a blue shift of up to 20 meV at a pressure of P=400 MPa, while the EL intensity increases under compression. The results are discussed in terms of changes in the band structure under uniaxial compression.

Keywords:

• high pressure effects
• III-V semiconductor heterojunctions
• electroluminescence
• GaAsP quantum wells

Acknowledgements

This work was supported by RFBR grant no. 07-02-00866. We thank our students E.V. Andreev and A.B. Orel for technical assistance.