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Abstract
The dependence of electrical resistance R(p) versus pressure for the x-cut plate of Sn2P2S6 crystals is investigated. It is established that dependence R(p) decreases with increasing pressure in ferroelectric and paraelectric phases, and shows discontinuities in the vicinity of the phase transition (PT) pressure. The dependence of electrical resistance versus pressure was first discovered in theory: R(p)=R 0 exp (D 0+D 1 p+D 2 p 2+D 3 p 3). Experimental results of R(p) are well described by the obtained theoretical dependence. Parameters R 0, D 0, D 1, D 2, D 3 were determined for ferroelectric and paraelectric phases. Dependences of the relative pressure coefficient of the electrical resistance and the coefficient of the band gap energy were found and investigated. Clear discontinuities of these functions are obtained in the vicinity of the PT pressure.