Effect of uniaxial strain on the reflectivity of graphene

Abstract

We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO₂ substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of strain modulus and direction, graphene may traverse one of several electronic topological transitions, characterized by a change of topology of its Fermi line. This results in features in the conductivity within the optical range, which might be observable experimentally.

Keywords:

• graphene
• optical reflectivity
• uniaxial strain
• eletronic topological transition