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Spectroscopy and transitions

Electroluminescence and band structure in p-AlxGa1−xAs/GaAs1−yPy/n-AlxGa1−xAs under uniaxial compression

, , , , , & show all
Pages 495-499 | Received 04 Sep 2009, Published online: 15 Dec 2009
 

Abstract

Band structure calculations in p-Al x Ga1−x As/GaAs1−y P y /n-Al x Ga1−x As heterostructure under uni-axial compression in the 1 1 0 direction indicates an increase in the optical energy gap with dE ph/dP ≈ 85 meV GPa−1, a decrease in the quantum well barriers and light hole–heavy hole crossover at uniaxial stress P ≈ 450–500 MPa. The observed increase in electroluminescence intensity and photon energy shift under uni-axial compression are explained by numerical calculation data.

Acknowledgements

This work was supported by RFBR grant no. 07-02-00866.

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