High pressure sintering behavior of polycrystalline diamond with tungsten

Abstract

Polycrystalline diamond was investigated under high pressure and high temperature of 5.0 GPa and 1100–1500 °C in the presence of tungsten. In situ resistance measurements indicated that reactions between diamond and tungsten happened at about 960 °C. Phase analysis demonstrated that WC increased and meta-stability of W₂C decreased clearly at the higher temperature. It is clear from the characterization of the sintered body that the electrical resistance decreased and the density of specimens increased as the sintering temperature rose. The specimen sintered at 1500 °C has a homogeneous microstructure and good conductivity.

Keywords:

• polycrystalline diamond
• tungsten
• high pressure and high temperature
• sintering
• electrical resistance

Acknowledgements

This work was funded by Sichuan University and was partially supported by the National Natural Science Foundation of China (Grant No. 51072123). The authors are very grateful to Beijing Supower Science and Technology Developing Co., Ltd, for polishing our samples, and to the editors and reviewers for their useful comments.