Investigation of formation mechanism of Ti₃SiC₂ by high pressure and high-temperature synthesis

ABSTRACT

In this paper, synthesis of titanium silicon carbide (Ti₃SiC₂) under high pressure and high-temperature condition has been investigated by using the reactant systems Ti/Si/C, Ti/SiC/TiC, Ti/SiC/C and Ti/TiC/Si. Results reveal that Ti/TiC/Si is unsuited to the synthesis of Ti₃SiC₂ under a high pressure of 2.0 GPa, while an elemental mixture of Ti/Si/C is applicable. By the addition of Al, Ti₃SiC₂ with 95.8 wt% purity was obtained from elemental mixture with a large excess of silicon. The optimum experimental parameters were determined as Ti/Si/Al/C having the molar ratio of 3:1.5:0.5:1.9, holding at 2.0 GPa and 1300 °C for 60 min.

KEYWORDS:

• High pressure
• Ti₃SiC₂
• formation mechanism

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by the National Nature Science Foundation of China under Grant No. 11602245 and 11702270.