Pressure dependence of photoconductivity for hydrogenated amorphous silicon

Abstract

Measurements of steady-state photoconductivity for hydrogenated amorphous silicon (a-Si:H) have been carried out at pressures up to 14 GPa and at room temperature. The ratio of photoconductivity to darkconductivity [sgrave]p/[sgrave]D decreases with increasing pressure. The activation energy for photoconductivity Ep, which is 0.25 eV at ambient pressure, decreases with increasing pressure at the rate -7 meV/GPa. These resultls are discussed with change in density of states.

Key Words:

• amorphous semiconductor
• photoconductivity
• high pressure
• electronic structure
• electrical transport