Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Abstract

In this paper, large-signal output characteristics of the metal–oxide–semiconductor field-effect transistors in the breakdown region are investigated using X-parameter measurements for the first time. Magnitude of coefficients can be larger than the result of coefficients at high input power as drain voltage increases to the breakdown region. The output impedance under large-signal drive incorporating with the and coefficients is derived and then employed to investigate output matching in the breakdown region and at high input power, which is significant for power amplifier designs. Compared with the conventional hot-Z₂₁₂₁ without coefficients considered, can be more accurate for the output impedance characterization. The presented analysis based on the X-parameters can be beneficial to output matching at high input power for power amplifier designs in the breakdown region.

Keywords:

• X-parameter
• avalanche breakdown
• large-signal model
• output impedance

Acknowledgements

The authors would like to thank National Chip Implementation Center (CIC), Hsinchu, Taiwan for chip fabrication, the National Nano Device Laboratories (NDL), Hsinchu, Taiwan for the X-parameter measurement support, and the Wireless Communication Antenna Research Center, Kaohsiung, Taiwan for the support.

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by the Ministry of Science and Technology of Taiwan under [grant number MOST 103-2221-E-110-018] and the National Science Council of Taiwan under [grant number NSC102-2221-E-110-023].