Analytical modeling of cross metallic metasurfaces absorption for Terahertz Band

ABSTRACT

In this paper, models of cross metallic metasurfaces absorbers for electromagnetic waves in the terahertz (THz) frequency range are reported and discussed. The absorption of a cross unit cell with linear and circular polarization for high frequencies is investigated. The analytical modeling presented by this paper allows to have a modeling support to optimize the design of metallic absorbers for terahertz applications. This study proves that the absorption coefficient depends on the impedance of the metasurface and its dimensions. Also, these results show that inductive meatsurfaces are used when the cell size is too smaller than the wavelength while capacitive metasurfaces are used in the other case. Our simulations demonstrate that the optimum width of this structure (grid) at frequency around 200 GHz is around $20\mu \mathrm{m}$. All the results indicate the cross metallic structure is promising for terahertz absorption applications.

KEYWORDS:

• Cross unit
• linear polarization
• circular polarization
• metasurface
• THz band
• absorption

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Notes on contributors

Sofiane Ben Mbarek

Sofiane Ben Mbarek was born in Tunisia (Kebili) in 1980. He received his BS degree in Electronic Engineering from the University of Toulon, France in 2005 and his M.S. in Telecommunications Radio Frequency and Microelectronic from the University of Nice Sophia Antipolis, France in 2007. He received his PhD degree in 2011 in Engineering Sciences from the University of Franche-Comté, Besancon, France. He was a postdoctoral fellow at CEA-Leti Grenoble, France for two years. Since 2014, he is Assistant professor at the University of Gabes (Tunisia) and Researcher in Innov’com laboratory, sup’com (Tunisia). His research involves sensors and instrumentation.

Aicha Tennich

Aicha Tennich was born in Tataouine, Tunisia, in 29 January 1995. She received the baccalaureate degree with honors in technical from the mixed high school of Tataouine, Tunisia, in 2013 and the diploma in basic license in information technology and telecommunications with honors from the higher Institute of Computer Science and Multimedia of Gabes, Tunisia, in 2016. Also, she obtained the professional level Voltaire certification with the score 673 and received the presidential award for the License, IT and Technology category in 2016. In 2019, she obtained the master’s degree in Electronics and Telecommunication with honors from the higher Institute of Computer Science and Multimedia of Gabes, Tunisia.

Fethi Choubani

Fethi Choubani was born in Mahdia (Tunisia) in 1961. He received the electrical engineering diploma from Ecole Nationale d’Ingenieurs de Tunis, Tunisia in 1987 and the MEng and PhD degrees from ENSEEIHT, Institut National Polytechnique de Toulouse, Toulouse, France in 1988 and 1993, respectively. Since 1993, he has been with Sup’Com, Ecole superieure des Communications de Tunis as an Assistant, Associate and Professor in charge of radiofrequency components and devices, and ElectroMagnetic Compatibility. His main interests are focused on oscillators and their applications to electromagnetic sensors, EMC, nonlinear devices, modeling of passive, active components and RF techniques and measurements. He has been offered a position of visiting Research Professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign in 1999 during 3 months, and in Laplace laboratory in ENSEEIHT for one month. He was Head of the Telecommunications Department, ESPTT (Tunisia) from 1995 to 1996, Director of Strategic studies, Tunisia Telecom (Tunisian operator in Telecommunications during 1999–2001), Director of Iset’Com during 2010–2011, and served as ICT Minister Advisor from 2012 to 2014. He has published more than 100 journal and international conference papers.