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ARTICLES

Automatic design of slanted wall anechoic chamber using 3D deterministic ray tube method

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Pages 1586-1600 | Received 09 Feb 2020, Accepted 22 May 2020, Published online: 04 Jun 2020
 

Abstract

In order to make an anechoic chamber operate similarly to ideal OATS, various design methods of the anechoic chamber have been studied. Without changing of RAM and major structural design of the rectangle anechoic chamber, we propose a method of automatically designing the shape of a slanted wall anechoic chamber by applying the PSO to 3D deterministic ray tube method. The 3D Deterministic Ray Tube method enables efficient and fast calculation of the electric field in any slanted wall anechoic chamber. The optimized slanted wall anechoic chamber has very good performance for NSA, sVSWR compared to the general rectangle chamber.

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Notes on contributors

W. Y. Song

Won-Young Song received the BS degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2008. He is currently pursuing the integrated MS and PhD degree in electrical engineering at the KAIST.

Y. D. Kim

Young-Dam Kim received the BS degree in electronics engineering from Ajou University, Suwon, in 2011, and the MS and PhD degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2013 and 2017, respectively. He was a Senior Engineer with Samsung Electronics Network Business, Suwon, in 2017. He was a post-doctoral position with KAIST, in 2018. Since 2019, he has worked for the Agency for Defense Development.

J. H. Lee

Jong-Hae Lee received the BS degree in electronic and electrical engineering from the Sungkyunkwan University, Suwon, South Korea in 2013, the MS degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2016. Since 2016, he has worked for the Agency for Defense Development.

H. J. Kim

Hyung-Ju Kim received the BS degree in electronics engineering from the Kyungpook National University, Daegu, South Korea in 2010, the MS and PhD degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2012 and 2018, respectively. Since 2018, he has worked for the Electronics and Telecommunications Research Institute.

J. W. Yu

Jong-Won Yu received the BS, MS, and PhD degrees in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 1992, 1994, and 1998, respectively. From 2000 to 2001 and 2001–2004, he was also with Wide Telcom Head and Telson, South Korea. From 2004 to 2013, he was with KAIST, initially as an Assistant Professor of electrical engineering and as an Associate Professor. He is currently a Professor in KAIST. His research interests emphasize microwave/millimeter-wave circuits (monolithic microwave integrated circuits (MMICs), hybrid), wireless communication systems, and RFID/ubiquitous sensor network.

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