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Abstract
In this paper, a dual-band power amplifier based on tri-band impedance matching circuit is proposed. This amplifier uses reverse thinking to combine the tri-band impedance matching network with the power amplifier to mismatch the intermediate frequency as the isolation band. And the intermediate frequency is 3.0 GHz. Besides, the design process of dual-band power amplifier is given, and an example is given. Through the actual test results of the amplifier, it can be seen that the additional power efficiency of the amplifier at the frequencies of 2.6GHz and 3.4GHz is about 60%, the output power is more than 40dBm, and the gain is above 10dB. In the test results, it can be seen that the stopband of the power amplifier is 2.95-3.05GHz, the minimum gain and the minimum drain efficiency output power of the stopband are −1dB and 2%, which has a good stopband suppression effect.
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No potential conflict of interest was reported by the author(s).
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Notes on contributors
H. Chen
H. Chen received the doctor degree in circuit and system from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2008. He is currently an associate professor in the UESTC, Chengdu, China. His main research interest is the RF and microwave circuits.
G.-X. Liu
G.-X. Liu received the B.S. degree in electromagnetic field and wireless technology from the Chongqing University of Posts and Telecommunications, Chongqing, China, in 2018. He is currently pursuing the M.S. degree in electronic engineering from the University of Electronic Science and Technology of China, Chengdu, China. The main research interest is the RF power amplifier.
F. Zhu
F. Zhu received the B.S. degree in electromagnetic field and wireless technology from the Chongqing University of Posts and Telecommunications, Chongqing, China, in 2018. He is currently pursuing the M.S. degree in electronic engineering from the University of Electronic Science and Technology of China, Chengdu, China. The main research interest is the RF transceiver.
M.-T. Han
M.-T. Han received the B.S. degree in electromagnetic field and wireless technology from the Chongqing University of Posts and Telecommunications, Chongqing, China, in 2018. He is currently pursuing the M.S. degree in electronic engineering from the University of Electronic Science and Technology of China, Chengdu, China. He is currently with the Smart Hybrid Radio Laboratory, UESTC. His current research interests including RF power amplifiers, and broadband high efficiency power amplifier design techniques.
D. Jiang
D. Jiang received the doctor degree in electromagnetic field and microwave technology from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, in 2014. He is currently an associate professor in the UESTC, Chengdu, China. His main research interest is the microwave circuits.