Restriction of the efficiency of photoinduced second-harmonic generation during optical poling of germanium-silicate glass

M. K. Balakirev Institute of Semiconductor Physics, Siberian Branch of RAS, prosp. acad. Lavrentyev, 13, Novosibirsk, 630090, Russia

L. I. Vostrikova Institute of Semiconductor Physics, Siberian Branch of RAS, prosp. acad. Lavrentyev, 13, Novosibirsk, 630090, Russia

V. A. Smirnov Institute of Semiconductor Physics, Siberian Branch of RAS, prosp. acad. Lavrentyev, 13, Novosibirsk, 630090, Russia

K. Ozga Institute of Materials Science and Engineering, Technical University of Czestochowa, Poland

I. V. Kityk Institute of Physics WSP Czestochowa, Al. Armii Krajowej 13/15, Poland

Abstract

The large growth of the absorption of radiation with doubled frequency in a region of high values for the induced electric fields has been detected during the investigation of an optical poling process in germaniumsilicate glass. The absorption suppresses the writing of the second-order susceptibility grating and leads to restriction of the maximum efficiency of the photoinduced second-harmonic generation in the glass.

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Restriction of the efficiency of photoinduced second-harmonic generation during optical poling of germanium-silicate glass

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Restriction of the efficiency of photoinduced second-harmonic generation during optical poling of germanium-silicate glass

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