Structure at the crack tip in GaAs

Z. C. Li Shenyang National Laboratory for Material Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, PR China

L. Liu Shenyang National Laboratory for Material Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, PR China

X. Wu Department of Mechanical Engineering, Wayne State University, Michigan, 48202, USA

L. L. He Shenyang National Laboratory for Material Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, PR China

Y. B. Xu Shenyang National Laboratory for Material Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, PR China

Cracks induced by low-load indentation of a GaAs single crystal have been investigated by high-resolution electron microscopy. The observations reveal dislocation generation, lattice distortion, and a transformation from a crystalline to a disordered structure, leading to the occurrence of an amorphous band in front of the crack tip.

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Structure at the crack tip in GaAs

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