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Abstract
By assuming that the conduction band in Si: P contains a mobility edge, we are able to account in detail for the temperature and stress dependences of the electrical conductivity in the vicinity of the metal-insulator transition. Most of the temperature dependence is found to result directly from the thermal redistribution of electrons among states with a strongly energy-dependent relaxation time. The model reproduces the previously unexplained T2 slope, which has been observed experimentally at stresses just below the critical value.