Superlattice-like stacking fault array in ion-irradiated GaN

Abstract

Controlling defects in crystalline solids is of technological importance for realizing desirable material properties. Irradiation with energetic particles is useful for designing the spatial distribution and concentration of defects in materials. Here, we performed ion irradiation into hexagonal GaN with the wurtzite structure and demonstrated the spontaneous formation of superlattice-like stacking fault arrays. It was found that the modulation period can be controlled by varying the irradiation conditions and subsequent thermal treatments.

Keywords:

• defect structures
• ion irradiation
• TEM
• superlattices
• self-assembly
• defect engineering

Acknowledgements

TEM observations were performed at the Comprehensive Analysis Center, ISIR, Osaka University. MI acknowledges Mr Takahiro Hattori for his contribution to a part of the TEM sample preparations. This study was partially supported by Grant-in-Aid for Scientific Research (C) (grant no. 22560696) from the Ministry of Education, Sports, Science, and Technology, Japan and the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division. A portion of the research was performed using EMSL, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory.