Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

Abstract

We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25 nm, 1.55 × 10⁻³ and 3.23 × 10¹³ cm⁻², respectively. From absorption spectra, the optical band gap was found to be ∼3.17 eV. A red shift was attributed to non-stoichiometry arising from Zn⁺² ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71 eV from I–V characteristics and 0.73 eV using the Norde plots.

Keywords:

• microelectronics
• optical absorption
• diffraction
• electrical conductivity
• ZnO
• diode structures
• SCLC

Acknowledgement

This work was financially supported by the Scientific Research Commission of Mustafa Kemal University (Project Nos: 1004 Y 0102 and 1102M 0101).