Dynamical recovery of InSb<123> between 340 and 510°C

Abstract

The stress-strain curves of InSb<123> have been investigated in the temperature range extending from 340 to 510°C. The two stages of dynamical recovery typical for elemental and compound semiconductors are observed in this material. The underlying micromechanical processes are identified as diffusion-controlled climb and cross-slip respectively. There is no indication of a further regime of dynamical recovery, in contrast with the behaviour of Ge and Si with <123> orientation.