Use of contact-reactive soldering in production of power semiconductor devices

Abstract

The special features of contact-reactive soldering of crystals to the bodies of devices are investigated. The methods of soldering crystals to the bodies of power semiconductor devices with the formation of the Si–Au, Al–Zn, and Zn–Sn eutectics are analysed. New methods of lead-free contact-reactive soldering of crystals with the formation of Si–Au, Al–Zn, Zn–Sn, and Al–Zn–Sn eutectics were developed and tested.

Keywords:

• contact-reactive soldering
• crystals
• gold spacer
• foil
• solder

Acknowledgements

The study was supported financially by the RFFI, grant 08-08-99033.

Notes

^1. Author's Cert. 1781732 (Russian Federation).

^2. Patent 5188982 (USA).

^3. Patent 5037778 (USA).

^4. Patent 5089439 (USA).

^5. Patent 2033659 (USA).

^6. Patent the 2298252 (Russian Federation).

^7. Claim 2008115350 (Russian Federation).

^8. Patent 2212730 (Russian Federation).

^9. Patent 2278444 (Russian Federation).