Erratum

This article refers to:

About the control of semiconducting properties of chromia: investigation using photoelectrochemistry and orientation mapping in a TEM

Latu-Romain, L., Parsa, Y., Ollivier, M., Mathieu, S., Vilasi, M., Renou, G., Robaut, F., & Wouters, Y. (2017). About the control of semiconducting properties of chromia: investigation using photoelectrochemistry and orientation mapping in a TEM. Materials at High Temperatures.

https://doi.org/10.1080/09603409.2017.1401281

When the above article was published online, the last column of the table 2 did not appear correctly.

Table 2 has now been corrected to:

Table

	Semiconducting type	Oxide growth direction	Major point defects
Internal layer p(O2)ei= 10^−14 atm	n	Inward
External layer p(O2)ei = 10^−14 atm	n	Outward
Internal layer p(O2)ei= 10^−13 atm	n	Inward
External layer p(O2)ei = 10 ^−13 atm	n = p	Both inward & outward or Outward	and or and
Internal layer p(O2)ei= 10^−12 atm	n	Inward
External layer p(O2)ei = 10^−12 atm	p	Outward

Taylor & Francis apologises for this error.