Abstract
The radiation energy loss in a novel polysilicon chemical vapor deposition (CVD) reactor was simulated. The S2S radiation model was adopted. The simulated results demonstrate that enlarging the reactor capacity from 12 rods to 27 rods can: reduce the energy loss by 20.8%; by increasing the inner shield temperature from 373 to 773 K, the energy saving is 9.6%; if the polysilicon growth rate is increased from 5 to 20 μm · min−1, the radiation energy consumption can be reduced by 75%; and changing the emissivity of the inner shield from 0.2 to 0.1 decreases the energy loss by 38.3%.