Abstract
The transient behavior of the thin-film deposition process in a chemical vapor deposition reactor is numerically investigated, considering gallium nitride as the deposited material. The numerical modeling involves coupling of microscale transport mechanisms and chemical reactions at the surface with the macroscale convective heat and mass transfer. The results obtained provide a detailed understanding of the entire process, including the microscale phenomena at the surface. The study also presents information that can be used to control the system operating time and the consumption of input power and precursors, which are generally quite expensive.