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Numerical Heat Transfer, Part A: Applications
An International Journal of Computation and Methodology
Volume 70, 2016 - Issue 5
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Original Articles

Heat, mass, and crystal growth of GaN in the ammonothermal process: A numerical study

, &
Pages 460-491 | Received 05 Oct 2015, Accepted 10 Feb 2016, Published online: 17 Aug 2016
 

ABSTRACT

This paper presents a computational model for the ammonothermal gallium nitride (GaN) crystal growth process, including fluid flow, heat transfer, dissolution and crystallization rates, GaN metastable phase transport, and crystal interface advancement. The presented article solves the Navier–Stokes equations along with the Brickman–Darcy–Forchheimer extensions for nutrient porous medium and Boussinesq approximation for free convection. Piecewise Linear Interface Calculation (PLIC) method is adopted to construct and advance the crystal interface. Simulations, in particular, were performed for a common research autoclave with a retrograde ammonothermal system. Special attention is given to the regions close to the crystal interface.

Nomenclature

A=

area

b=

Forchheimer coefficient

B=

porous media binary

C=

concentration

cp=

heat capacity

D=

effective diffusivity

Da=

Darcy number

=

particle diameter

f=

volume fraction of solid

g=

gravitational acceleration

GaN=

gallium nitride

Gr=

Grashof number

h=

mesh size for a square grid

K, K=

conductivity

KNH2=

potassium amide

L=

length of line segment in PLIC method

m=

gradient of f

M=

molar mass

n=

normal

NH3=

ammonia

p=

pressure

PLIC=

piecewise linear interface calculation

Pr=

Prandtl number

r=

radial direction

R=

reaction product

ri=

inside diameter

S=

GaN solubility

Sc=

Schmidt number

t=

time

T=

temperature

v=

kinematic viscosity

V=

velocity

z=

vertical direction

α=

thermal diffusivity

β=

expansion coefficient

μ=

viscosity

κ=

heterogeneous reaction rate coefficient

ρ=

density

ε=

porosity

λ=

permeability

φ=

source term

τo=

tortuosity factor

σ,δ=

computational parameters

η,ζ=

mathematical transformations

θ=

dimensionless temperature

Mathematical symbols=
ΔH=

dissolution heat

=

volume

*=

dimensionless parameter

<>=

volume average over volume ∀

<>f=

volume average over fluid volume ∀

Subscripts=
c=

concentration

ch=

characteristic

E=

energy

eff=

effective

f=

fluid

fs=

fluid–solid interface

H=

high

i,j=

r and z direction indices

L=

low

Max=

maximum

s=

solid

Tri=

triangle

Tra=

trapezoid

Nomenclature

A=

area

b=

Forchheimer coefficient

B=

porous media binary

C=

concentration

cp=

heat capacity

D=

effective diffusivity

Da=

Darcy number

=

particle diameter

f=

volume fraction of solid

g=

gravitational acceleration

GaN=

gallium nitride

Gr=

Grashof number

h=

mesh size for a square grid

K, K=

conductivity

KNH2=

potassium amide

L=

length of line segment in PLIC method

m=

gradient of f

M=

molar mass

n=

normal

NH3=

ammonia

p=

pressure

PLIC=

piecewise linear interface calculation

Pr=

Prandtl number

r=

radial direction

R=

reaction product

ri=

inside diameter

S=

GaN solubility

Sc=

Schmidt number

t=

time

T=

temperature

v=

kinematic viscosity

V=

velocity

z=

vertical direction

α=

thermal diffusivity

β=

expansion coefficient

μ=

viscosity

κ=

heterogeneous reaction rate coefficient

ρ=

density

ε=

porosity

λ=

permeability

φ=

source term

τo=

tortuosity factor

σ,δ=

computational parameters

η,ζ=

mathematical transformations

θ=

dimensionless temperature

Mathematical symbols=
ΔH=

dissolution heat

=

volume

*=

dimensionless parameter

<>=

volume average over volume ∀

<>f=

volume average over fluid volume ∀

Subscripts=
c=

concentration

ch=

characteristic

E=

energy

eff=

effective

f=

fluid

fs=

fluid–solid interface

H=

high

i,j=

r and z direction indices

L=

low

Max=

maximum

s=

solid

Tri=

triangle

Tra=

trapezoid

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