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Abstract
A three-dimensional transient numerical model is developed based on the Douglas alternating direction implicit (ADD) scheme and the parallel Gaussian elimination technique, to analyze the temperature distribution and temperature rise of an X-ray lithography process. The numerical model includes four layers commonly found in an X-ray lithography process: mask layer, resist layer, substrate layer, as well as a gap layer between the mask and resist layers. The numerical procedure is simple and has a high inherent parallelism, since it is a domain decomposition algorithm. Numerical results were obtained for a single X-ray beam pass indicating the transient temperature distribution in a typical X-ray lithography process.
Notes
Address correspondence to Dr. Hisham Hegab, Louisiana Tech University, Department of Mechanical Engineering, Ruston, LA 71272-0046, USA.