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Focused electron-beam-induced (FEB-induced) deposition and etching are versatile, direct-write nanofabrication schemes that allow for selective deposition or removal of a variety of materials. Fundamentally, these processes are governed by an electron-induced reaction with a precursor vapor, which may either result in decomposition to a solid deposit or formation of a volatile etch by-product. The ability to induce such localized reactions by placement of a nanometer-sized focused electron probe has recently drawn considerable attention. In response, we have reviewed much of the relevant literature pertaining to both focused electron-beam-induced etching and deposition. Because these nanoscale processing techniques are still in their relative infancy, a significant amount of scientific research is being conducted to understand, and hence improve, the processes. This article summarizes the associated physics of electron-solid-vapor interactions, discusses related physical processes, and provides an introduction to electron-beam-induced etching (EBIE) and electron-beam-induced deposition (EBID). Additionally, specific applications of FEB-induced processes are discussed and several FEB computer model and simulation results are reviewed.
ACKNOWLEDGMENTS
The authors acknowledge support from the Microsystems Technology Office of DARPA, the Semiconductor Research Corporation (grant 1281 managed by Dan Herr), Intel Corporation (Ted Liang, program manager) and a portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy. Additionally, the authors gratefully acknowledge many helpful discussions with Professor David C. Joy.
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