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Abstract
Over the past 5 years, there has been growing interest in a class of amorphous semiconductors deposited in thin-film form in the presence of hydrogen. The interest has derived primarily from certain electronic properties, such as the ability to control the Fermi level by substitutional doping, that make the materials potential candidates for solar photovoltaic energy conversion and thin-film device applications. These same properties have also made the materials attractive “test-beds” for basic research into electronic processes and defect states in amorphous semiconductors.
