Chemical Structures of the SiO₂Si Interface

Abstract

As a result of considerable progress in microfabrication technology for ultra-large scale integration (ULSI), it has become necessary to control oxide formation on an atomic scale in order to produce defect-free SiO₂/Si interfaces. However, the possibility of forming an atomically flat interface by oxidizing an atomically flat silicon surface without introducing structural defects is not yet clarified. In this article the present understanding of chemical structures of SiO₂/Si interfaces and initial stage of oxidation of silicon surfaces are reviewed.

Key Words:

• clean silicon surface
• hydrogen termination
• chemical cleaning
• thermal oxidation
• silicon oxide
• oxide formation
• SiO₂/Si interface
• interface
• interface formation
• interface structure
• chemical structure
• structural defect
• defect
• atomic scale control