Isotopic mass effects for low-energy channeling in a silicon crystal

Abstract

Monte Carlo (MC) simulations have been used to study the low-energy channeling of ¹⁰B and ¹¹B ions along the [100] axis in Si crystal. MC simulations show that the critical angle Ψ_C ≈ 15.3(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹⁰B ions and Ψ_C=14.5(keV/E)^1/2 (in degrees) for the channeling of isotopic ¹¹B ions, where E is the incident energy. This means that (Ψ_{C for 10B ions}/Ψ_{C for 11B ions})≈ (15.3/14.5)≈ (11/10)^1/2.

Keywords:

• mass effect
• channeling
• silicon crystal

PACS :

• 61.46. Fg
• 61.85.+p

Acknowledgements

This study was supported by the Knowledge Innovation Project of Chinese Academy of Sciences under grant no. KJCX2-SW-N10 and by the National Basic Research Program of China (973 Program) 2010CB832903.