Abstract
In the present work, we have investigated the role of melting temperature in miscible metallic systems, where one component is sensitive and the other component is insensitive to electronic energy deposition. The metal/metal bilayer system (W/Ti) was prepared by thermal evaporation and the samples were irradiated by 120 MeV Au ions at different fluences ranging from 3×1013 to 1×1014 ions/cm2. Rutherford backscattering spectrometry measurements of the pristine and the irradiated samples show that there is no interface mixing due to swift heavy ion (SHI) irradiation. The role of melting temperature in intermixing miscible metal/metal bilayers induced by SHIs has been successfully explained using equations based on calorimetric principle and thermal spike calculations.
Acknowledgements
A. Gupta and R.S. Chauhan are grateful to University Grants Commission (UGC) of India, New Delhi, for providing the financial support for this work. The authors would also like to thank to M. Toulemonde, CIMAP, France, for allowing us to use the code for thermal spike calculations. The authors are thankful to S. Ojha (IUAC, New Delhi) for help in performing the RBS experiment.