Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure

ABSTRACT

The effect of traps to C–V and I–V plots of InP/InGaAs heterostructure with 3 MeV proton irradiation at different fluences has been discussed. After proton irradiation, the total reverse capacitance increases, which does not only include the variation of the depletion region width, but also the charging and discharging effect of traps. The total actual traps density N_SS of InP/InGaAs heterostructure could reach 13 orders of trap density, which is from the peak under reverse bias. The forward current is dominated by recombination current at low voltage and by the tunneling current at high voltage. The tunneling current and trap-assisted tunneling current are dominant in the reverse current.

KEYWORDS:

• Proton irradiation
• traps
• barrier capacitance
• current mechanism

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by Advance Research Foundation of China  [grant number 9140Axxx501]; National Defense Advance Research project [grant number 315xxxxx301]; Frontier Innovation Program [grant number 48xx4].