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Abstract
This article aimed to report the results on the properties of Gd2O3/(CZ-pSi) diodes under various gamma ray irradiation dose rates (3, 6, 12, 18, 24, 30, 36, 42, 50 Gy). n-type Gd2O3 films were deposited on a p-type Czochralski-grown monocrystalline silicon (CZ-pSi) wafers by pulsed laser deposition (PLD) technique with varying building laser energies (500, 600, 700, 800, 900 mJ) at room temperature and pressure (3.3 × 10−2 Pa). Amorphous structures were perceived for all films by XRD. Band gaps of the films were modified by controlling the amount of Gd2O3 on CZ-pSi wafers by laser power during deposition and determined to be between 5.30 and 5.75 eV. The Gd2O3/(CZ-pSi) films were irradiated by a Co-60 gamma-ray source system. The current and voltage (I-V) measurements, before and after irradiation (0–50 Gy), indicated that the current decreases toward zero with increasing doses. Capacitance and voltage (C-V) measurements at frequencies of 10–1000 kHz before and after irradiation showed a shift towards the right side of the pre-irradiation curves for each film. The shift was observed in both I-V and C-V curves with increasing radiation doses at 100 kHz as the average of the frequencies used. Contrary to the decrease in current curves, there was an upward increase in capacitance curves of all films with increasing radiation dose. The best build-in potentials of 0.1 V (800 mJ), 1.2 V (500 mJ) and 1.4 V (600 mJ) were obtained for the laser deposition powers of the Gd2O3/(CZ-pSi) diodes. These results are promising for diodes to be used in the radiation detection applications such as in neutron and alpha particles detectors.
Acknowledgements
This work was supported by the Presidency of Turkey, Presidency of Strategy and Budget under Contract Number: 2016K12-2834. We also thank the Bolu Abant İzzet Baysal University, Nuclear Radiation Detectors Application and Research Center (NÜRDAM), Turkey and the University of Technology, Department of Applied Sciences, Iraq for allowing us to use their facilities.
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No potential conflict of interest was reported by the author(s).
Correction Statement
This article has been corrected with minor changes. These changes do not impact the academic content of the article.
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Notes on contributors
Husam Raed Sabeeh Al-Esaifer
Husam Raed Sabeeh Al-Esaifer is a Master of Science in Department of Physics at Bolu Abant Izzet Baysal University, Bolu/Turkey.
Aliekber Aktağ
Dr. Aliekber Aktağ is graduated from the Middle East Technical University (METU), Physics Department, Ankara/Turkey. He completed his Master of Science at East Texas State University (ETSU) at Commerce/TX-USA with thesis titled by ‘Auger electron appearance spectroscopic investigation of Co and its compounds: Co(NO3)26H2O, Co(OH)2, CoSO4, and CoCO3xH2O’. He got his PhD degree from the University of Nebraska-Lincoln (UNL)/NE-USA with thesis titled by ‘Direct laser interference patterning of magnetic thin films’. Currently, he is a researcher at the Center for Nuclear Radiation Detectors Research and Applications (NURDAM), Bolu Abant Izzet Baysal University, Bolu/Turkey and instructor in Department of Physics in the same university. His research interests are Silicon PIN Photodiodes, MOS capacitors, Solar cells, Sensors, RadFETs, Semiconductor devices and Dosimeters.
Uday Muhsin Nayef
Dr. Uday Muhsin Nayef got PhD in Laser and Optoelectronics (Nanotechnology). He is professor at The University of Technology, Department of Applied Science, Baghdad, Iraq.
Emre Doğanci
Emre Doğanci was born in Bolu in 1990. He received the BS and MSc degree in physics from Abant Izzet Baysal University, Bolu, Turkey, in 2015 and 2018, respectively. He is currently a PhD student fellowship disciple of ‘Micro and Nanotechnology’ under ‘YÖK 100/2000 PhD Project’ with Center for Nuclear Radiation Detectors Research and Applications at Abant Izzet Baysal University. His current research interests include Silicon PIN Photodiode, Schottky devices, MOS capacitors, solar cells, sensors, RadFETs, Semiconductor devices design and simulation, active Dosimeters.