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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 158, 2003 - Issue 11-12
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Original Articles

Effects induced by 𝛄-irradiation on intraband transitions in Sr2+-doped ammonium zinc chloride crystals

, &
Pages 743-755 | Received 24 Feb 2003, Accepted 19 Mar 2003, Published online: 13 May 2010
 

Abstract

Considerable changes were observed in the X-ray diffraction pattern of ammonium zinc chloride after doping with Sr2+ in different concentrations and after irradiating with Ξ³ rays at different doses. The effect of Ξ³-radiation and Sr2+ content on optical parameters of (NH4)2ZnCl4: x Sr2+ single crystals (x = 0.00, 0.020, 0.039, 0.087 or 0.144β€Šwt.%) has been investigated. The transmittance near the absorption edge of unirradiated crystals and crystals irradiated with different Ξ³-doses has been measured, hence the absorption coefficient (Ξ±) was calculated. The values of Ξ± at room temperature increased under the influence of Ξ³-irradiation. The rate by which Ξ± increases with photon energy just before the absorption edge is strongly inhibited by higher Ξ³-doses. The type of intraband transition in (NH4)2ZnCl4: x Sr2+ single crystals was found to be of the allowed indirect transition, and Ξ³-irradiation had no effect on the type of transition. The values of the optical energy gap (E g ) were calculated as a function of Ξ³-dose. The effect of Ξ³-irradiation was found to be more pronounced on samples doped with x = 0.087 or 0.144β€Šwt.% Sr2+. The results can be discussed on the basis of Ξ³-irradiation-induced defects and Sr2+ concentration. A diagram representing probable transitions to the created bands due to irradiation could be constructed.

*On leave of absence from Physics Department, Faculty of Science, Assiut University, 71516 Assiut, Egypt

Acknowledgement

The authors are thankful to the staff of the Radiotherapy and Nuclear Medicine Department, Assiut University for irradiating the samples.

Notes

*On leave of absence from Physics Department, Faculty of Science, Assiut University, 71516 Assiut, Egypt

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