Molecular dynamics simulation of defects production in the vicinity of voids

Abstract

We report on the results of computer simulation of point defect production near voids in crystalline Cu at primary knock-on atom (PKA) kinetic energies ranging from 5 to 1000 eV. The PKA energy dependence of numbers of created defects are revealed. The threshold energy for a stable vacancy formation is found to be much smaller than that for an interstitial atom, which results in a biased formation of vacancies in the void proximity in the whole investigated range of PKA energies. Dissolution of small voids by subthreshold irradiation is simulated. The impact of considered radiation effects on kinetics of radiation damage is discussed.

Keywords:

• Radiation damage
• Molecular dynamics
• Focusing collisions
• Voids

Acknowledgements

This study has been supported by the STCU grants Nos.1761 and 2149.