Laser induced sputtering of Ga atoms from clean and laser-damaged GaP (111)surfaces

Abstract

Laser-induced sputtering of Ga atoms from cleaned and damaged GaP (1 1 1) surfaces has been studied. It is found that the sputtering yield of Ga atoms increases rapidly with increasing laser fluence across the threshold fluence above which the reconstructed structure is damaged. We found also that the damaged surfaces exhibit remarkably higher sputtering yields.