Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

E. Bendada Département de Génie Electrique, Université My Ismaïl - F.S.T., B.P. 509 Boutalamine, Errachidia, Morocco

K. Raïs Laboratoire de Caractérisation des composants à Semiconducteurs, Université Chouaïb, Doukkali, El Jadida, Morocco

P. Mialhe Département de Génie Electrique, Université My Ismaïl - F.S.T., B.P. 509 Boutalamine, Errachidia, Morocco

Abstract

The purpose of this work was to characterize the annealing of Gamma-ray damage in power MOSFETs. Parameters degradation for a dose rate of 103.8 rad min⁻¹ are presented. Temperature annealing effects, at 100°C, are discussed and analyzed by the evolution of the density trapped oxide charges and trapped interface charges.

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Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

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Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs

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