Chemically deposited p-type MoBiCuS₄ thin film for photoelectrochemical cell applications

Abstract

MoBiCuS₄ thin film has been deposited by chemical bath deposition and its structural, morphological, optical and photovoltaic properties have been studied. The XRD shows the presence of mixed phases (monoclinic and orthorhombic) and the crystallite size is found to be about 112 nm. The SEM images picturized the smaller sized irregular and bigger sized rectangular particles, the EDS analysis shows near stoichiometric ratio for the MoBiCuS₄ thin film. MoBiCuS₄ thin film exbihits higher optical absorption in the visible region and the bandgap is found to be 2 eV. p-type conductivity is noticed in the prepared film. The Photovoltaic (PV) performances of the MoBiCuS₄ thin film demonstrates 1.2% photoconversion efficiency with V_oc = 0.515 V and J_sc = 3 mA/cm³. This study suggests that the MoBiCuS₄ thin film can be used as a absorber material for PV cells.

GRAPHICAL ABSTRACT

Keywords:

• MoBiCuS₄
• Mo mixed metal chalcogenide
• thin film
• semiconductor
• photoelectrochemical cell

Acknowledgements

The authors are thankful to the DST-FIST, UGC-SAP and RUSA-MHRD New Delhi for providing financial support to the Department of Physics, Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, India.

Disclosure statement

No potential conflict of interest was reported by the authors.