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Materials and Manufacturing Processes Volume 31, 2016 - Issue 8
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Original Articles

A Study of Ta-Si-N/Ti Bilayer Diffusion Barrier for Copper/Silicon Contact Systems

Minghui DingKey Laboratory of Superlight Material and Surface Technology, Ministry of Education, Harbin Engineering University, , PR China;College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin, PR China;Institute of Surface/Interface Science and Technology, Harbin Engineering University, Harbin, PR ChinaCorrespondence[email protected].
,
Hang ZhengKey Laboratory of Superlight Material and Surface Technology, Ministry of Education, Harbin Engineering University, , PR China;College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin, PR China;Institute of Surface/Interface Science and Technology, Harbin Engineering University, Harbin, PR China
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Li WangKey Laboratory of Superlight Material and Surface Technology, Ministry of Education, Harbin Engineering University, , PR China;College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin, PR China;Institute of Surface/Interface Science and Technology, Harbin Engineering University, Harbin, PR China
&
Hongsen ZhangKey Laboratory of Superlight Material and Surface Technology, Ministry of Education, Harbin Engineering University, , PR China;College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin, PR China;Institute of Surface/Interface Science and Technology, Harbin Engineering University, Harbin, PR China
Pages 1009-1013 | Received 27 Nov 2014, Accepted 29 Dec 2014, Published online: 30 Aug 2015
 
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Abstract

Ta-Si-N (10 nm)/Ti (20 nm) bilayer film has been designed with the purpose of using as diffusion barrier in copper interconnection. Ta-Si-N/Ti bilayer diffusion barriers were deposited on the substrate of n-type (100) silicon wafer using radio-frequency (RF) magnetron sputtering, followed by in situ deposition of copper. To investigate the thermal stability of the Ta-Si-N/Ti diffusion barriers, annealing was subsequently conducted in N2 gas for 60 min and annealing temperatures were chosen at 600°C, 650°C, 700°C, 750°C, and 800°C. X-ray diffraction (XRD) revealed that Ta-Si-N layer grown on the Ti layer exhibited an amorphous phase. The results indicated that Ta-Si-N/Ti film can prevent copper diffusion at 750°C. After annealing at 750°C, the production of Ti-Si layer can effectively decrease contact resistance between barrier and silicon.

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