Fabrication and characterization of MFISFET using Al₂O₃ insulating layer for non-volatile memory

Chang Ho Shin Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1, Kusong-dong, Yusong-gu, Taejon, 305–701, Korea

Seon Yong Cha Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1, Kusong-dong, Yusong-gu, Taejon, 305–701, Korea

Hee Chul Lee Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1, Kusong-dong, Yusong-gu, Taejon, 305–701, Korea

Won-Jae Lee Micro-Electronics Technology Laboratory, ETRI, 161, Kajong-dong, Yusong-gu, Taejon, 305–600, Korea

Byoung-Gon Yu Micro-Electronics Technology Laboratory, ETRI, 161, Kajong-dong, Yusong-gu, Taejon, 305–600, Korea

Dong-Hwa Kwak TD Team, Semiconductor R&D Center, Samsung Electronics Co., San#24 Nongseo-ri, Kiheung-eup Yongin-city, Kyunggi-do, 449–771, Korea

Abstract

Metal-ferroelectric-insulator-semiconductor (MFIS) structures including an Al₂O₃ insulator layer and a SBT ferroelectric film are fabricated with their optimum thicknesses extracted by computer simulation, and then electrical properties of MFIS structures are investigated. In Pt/Al₂O₃/Si structure, no hysteresis and low leakage current of 7.5 × 10⁻⁹A/cm² have been observed. The MFIS structure, Pt/SBT/Al₂O₃/Si, shows a memory window width of 1.2 V at an operation voltage of 5 V and a gate leakage current density of 7 × 10⁻⁸A/cm²at 1 V. Fatigue characteristics of the MFIS structure are also studied.

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Fabrication and characterization of MFISFET using Al₂O₃ insulating layer for non-volatile memory