Electrical characteristics of Pt-SBT-Polysilicon (MFIP) capacitors with yttrium oxide as the buffer layer

Abstract

MFIS structures with Strontium Bismuth Tantalate (SBT) as the ferroelectric thin film and yttrium oxide as the buffer layer have been fabricated on polysilicon layer as well single crystal silicon. Yttrium oxide film was deposited by electron beam evaporation and SBT was deposited by spin on MOD technique. Preliminary analysis of capacitance vs voltage (C-V) curve shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. For an applied DC bias of ± 5 V, the C-V curve shows a memory window of ± 2 V.

Key Words:

• MFIS structures
• SBT
• buffer layer
• hysteresis
• memory window
• polysilicon