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Abstract
An annealing 650°C process for SrBi2Ta2O9 (SBT) has been achieved in metal organic chemical vapor deposition (MOCVD). An optimized post anneal step at 650°C is also included. The samples showed a high remnant polarization (2Pr) of 14 μC/cm2 @5V, low leakage current of 10−8 A/cm2 or less @4V, and a fatigue-free nature. This is the first report of MOCVD deposited SBT that can achieve 650°C crystallization with the post annealing.