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Integrated Ferroelectrics
An International Journal
Volume 32, 2001 - Issue 1-4
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Section G: Modeling and theory

Fatigue and oxygen vacancy ordering in thin-film and bulk single crystal ferroelectrics

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Pages 259-266 | Received 10 Apr 2000, Published online: 12 Sep 2006
 

Abstract

Analytic expressions for fatigue are presented for both thin film and single crystal ferroelectric perovskite samples. The models are based on pinning of ferroelectric domain walls by oxygen vacancies oriented in planes parallel to the polarisation direction. In thin films a self-ordering effect is invoked to explain the fatigue behaviour. The thin film and single crystal expressions are qualitatively different in their temperature dependencies, but both agree with experiment.

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