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Integrated Ferroelectrics
An International Journal
Volume 62, 2004 - Issue 1
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Original Articles

Slow Dielectric Relaxation in Pb(Zr,Ti)O3 and (Ba,Sr)TiO3 Ferroelectric Thin Films

V. K. YARMARKIN A.F Ioffe Physico-Technical Institute, St. Petersburg, Russia, 194021
Pages 29-34 | Received 01 Aug 2003, Accepted 01 Jan 2004, Published online: 11 Aug 2010
 
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Abstract

An impedance analysis of Ni/Pb(Zr,Ti)O3/Pt thin-film structures based on measurements at the frequencies from 100 Hz to 100 MHz, along with the data of Grazing Angles XRD, TEM and photo-electric study, is used to obtain electronic structure of the PZT thin films deposited by sol-gel method on silicone substrates. Both slow capacitance relaxation and charging/discharging currents versus time under step-voltage excitation have been studied in (Ba,Sr)TiO3 thin films between SrRuO3 electrodes.

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