Ferroelectric Properties of Bi_3.25La_0.75Ti₃O₁₂ Thin Films Fabricated Sol-Gel with 2-Step RTA Process

Abstract

We attempted to reduce c axis-oriented grains of BLT thin films (Bi_3.25La_0.75Ti₃O₁₂) by controlling 2-step RTA annealing conditions. BLT thin films (Bi_3.25La_0.75Ti₃O₁₂) were prepared using sol-gel method. 2-step RTA annealing was employed to restrain the growth of c axis-oriented grains in randomly oriented BLT films. Microstructural variations of BLT thin films were investigated by monitoring XRD and AFM. The ferroelectric properties such as hysteresis loop, switching behavior, and leakage current were examined in terms of RTA process conditions. The result revealed that as the portion of (117) oriented grain increases, the ferroelectric properties except the leakage current property improved. From the study, we can optimize RTA process to yield better ferroelectric properties of BLT thin films (Bi_3.25La_0.75Ti₃O₁₂).

Acknowledgement

The author would like to thank Hynix Corporation for providing BLT samples in this research. This work was supported by funding from System IC 2010 Project (Grant No. M103BY010043-03B2501-04313)