Abstract
Bi3.25La0.75Ti3−3x Nb3x O12 (BLTN) and Bi3.25La0.75Ti3−3x V3x O12 (BLTV) ceramics (x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) were prepared by a solid state reaction method. For all BLTN and BLTV compositions, bismuth-layered perovskite structures were confirmed using X-ray diffraction. The remanent polarization increases and reaches to the maximum value at x = 0.05 for BLTN and at x = 0.01–0.03 for BLTV ceramics. With increasing doping concentrations, the Curie temperature of BLTV ceramics increased while that of BLTN ceramics decreased. For the substitutions of high-valence Nb5 + and V5 + ion for Ti4 + ion, effects of ion doping on dielectric and ferroelectric properties were investigated.
ACKNOWLEDGEMENTS
This work was supported by Korean Science & Engineering Fundation (KOSEF) through Grant No. R08-2004-000-10557-0.