The Lanthanide Doping Effects on the Electrical Properties of Bi₄Ti₃O₁₂ Thin Films Fabricated on Silicon Substrates

Abstract

Lanthanides (La³⁺, Nd³⁺, Sm³⁺ and Eu³⁺) doped Bi₄Ti₃O₁₂ (BIT) films fabricated on p-type Si(100) substrates by a sol-gel spin coating process. The films were characterized by X-ray diffractometer and scanning electron microscope. Memory windows calculated from the measured C-V hysteresis curves were approximately 3.5, 0.85, 0.8, and 0.54 V for La-, Nd-, Sm-, and Eu-doped BIT films with a sweep voltage of ± 10 V, respectively. The effects of lanthanides substitution for Bi³⁺ in the perovskite layer on the electrical properties, such as C-V and I-V characteristics, have been reported.

Keywords:

• Lanthanide
• bismuth titanate
• sol-gel deposition
• ferroelectric materials
• field effect transistor

ACKNOWLEDGMENTS

This work was supported by grant (No. R05-2004-000-10159-0) from Ministry of Science & Technology.