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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

Ferroelectric Properties of Both Nd Substituted and W Doped Bi4Ti3O12 Thin Films Deposited by Chemical Solution Deposition Technique

YIN YUAN National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
SU DONG National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
LOU JING National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
MA JUN National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
LI WEI National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
LU XIAOMEI National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
,
ZHU JINSONG National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
&
WANG YENING National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China, 210093
 show all
Pages 69-80 | Received 01 May 2004, Accepted 01 Jul 2004, Published online: 11 Aug 2010
 
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Abstract

Both Nd substituted and W doped bismuth titanate thin films were deposited by chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrates. B-site doping with W6+, enhanced the remnant polarization and improved the fatigue property. Remnant polarization of Bi3.15Nd0.85Ti2.98W0.02O12 (BNTW) is 27 μ C/cm2, which is higher than that of Bi3.15Nd0.85Ti3O12 (BNT) deposited in the same condition. Good fatigue endurance was confirmed at 1 M Hz frequency up to 1010 switching cycles in both BNTW and BNT thin films. However, at the frequency of 50 kHz, the BNTW thin films show an improved fatigue property. W-doped effect is discussed.

ACKNOWLEDGMENT

This work was supported by the National Science Foundation of China (No 90207027, 100210001), the 973 Project of MOST (2002CB613303) of China, and Jiangsu Natural Science Foundation (No. BK2002410).

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