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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

Ferroelectric Characteristics of the Mod-Derived SrxBi2.4(Ta0.75Nb0.25)2O9 Thin Films and Electrical Properties of the Pt/SrxBi2.4(Ta0.75Nb0.25)2O9/TiO2/Si Structure

J. H. PARK Department of Material Science and Engineering, Hongik University, Seoul, Korea, 121-791
,
J. H. CHOI Department of Material Science and Engineering, Hongik University, Seoul, Korea, 121-791
,
K. Y. LEE Department of Material Science and Engineering, Hongik University, Seoul, Korea, 121-791
&
T. S. OH Department of Material Science and Engineering, Hongik University, Seoul, Korea, 121-791
Pages 81-88 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 11 Aug 2010
 
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Abstract

The 400 nm-thick SrxBi2.4(Ta0.75Nb0.25)2O9 films (0.7 ≤ x ≤ 1.3) were fabricated by metal-organic decomposition and their ferroelectric properties were compared with the SrxBi2.4Ta2O9 films. The electrical properties of the Pt/SrxBi2.4(Ta0.75Nb0.25)2O9/ TiO2/Si structures were also compared with the characteristics of the Pt/SrxBi2.4Ta2O9/TiO2/Si. While the Sr-deficient Sr0.85Bi2.4Ta2O9 exhibited a maximum remanent polarization among the SrxBi2.4Ta2O9 films, well-saturated hysteresis curves were obtained with the SrBi2.4(Ta0.75Nb0.25)2O9 among the SrxBi2.4(Ta0.75Nb0.25)2O9 films. The Pt/SrxBi2.4(Ta0.75Nb0.25)2O9/TiO2/Si and Pt/SrxBi2.4Ta2O9/TiO2/Si exhibited similar variation behavior of the memory window with the Sr content of the ferroelectric film. The Pt/SrBi2.4(Ta0.75Nb0.25)2O9/TiO2/Si and Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si exhibited memory windows of 1.35 V and 1.3 V at ±5 V, respectively.

ACKNOWLEDGEMENT

This work was supported by 2004 Hongik University Research Fund.

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