Abstract
Yttrium-substituted Bi4 - xYxTi3O12 (x = 0.00, 0.10, 0.30, 0.50, 0.75, 1.00) polycrystalline thin films were synthesized by metal-organic decomposition (MOD) method. Ferroelectric measurements revealed that the Bi4Ti3O12 films substituted by Y with appropriate ratios could have higher remnant polarization (Pr) and significantly improved fatigue behavior compared with BTO. The remnant polarization of the Bi3.50Y0.50Ti3O12 capacitor reached 10 μC/cm2 at an applied field about 120 kV/cm with nearly fatigue free property up to 1010cycles. XRD patterns show a little impurity phases as well as Aurivillius phase in the crystallization process with different annealing temperature. Perhaps it induced the poor leakage current properties.
ACKNOWLEDGMENT
This work was supported by the National Science Foundation of China (No. 90207027, 10021001), the 973 Project of MOST (2002CB613303) of China, and Jiangsu Natural Science Foundation (No. BK 2002410).