Ferroelectric-Gate Field Effect Transistors Using (Y,Yb)MnO₃/Y₂O₃/Si(111) Structures for 1T-Type FeRAMs

Abstract

Fabrication and characterization of metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFIS FETs) using (Y,Yb)MnO₃/Y₂O₃/Si structures were introduced for the first time. P-channel MFIS FETs were fabricated on n-type Si(111) substrates, in which an Y_0.5Yb_0.5MnO₃(200 nm)/Y₂O₃(25 nm) structure was used as gate insulator. The Y_0.5Yb_0.5MnO₃ and Y₂O₃ films were prepared by chemical solution deposition. A fabricated MFIS FETs showed the hysteresis loop due to spontaneous polarization in the I_D-V_GS characteristic, in which the memory window was about 0.9V when the applied gate voltage was swept between 8 V and −8 V. Especially, the alternative drain current was retained after applying a single voltage pulse with a magnitude of +9 V or −9 V.

Keywords:

• MFIS FET
• (Y,Yb)MnO₃
• Y₂O₃
• chemical solution deposition
• FeRAM

ACKNOWLEDGEMENTS

This work was performed under the auspices of the R&D projects in Cooperation with Academic Institutions (Next-Generation Ferroelectric Memories), supported by NEDO (New Energy and Industrial Technology Development Organization in Japan) and managed by FED (R&D Association for Future Electron Devices).